5x RJP30E4 IGBT Transistors – TO-263 Encapsulation, Silicon N Channel, Surface Mount
5x RJP30E4 IGBT Transistors – TO-263 Encapsulation, Silicon N Channel, Surface Mount
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5x RJP30E4 IGBT Transistors – TO-263 Encapsulation, Silicon N Channel, Surface Mount

4.5 stars out of 6 reviews
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27 ratings

About this item

This is a pack of 5 new RJP30E4 IGBT transistors, in TO-263 encapsulation.

They're unused, unopened, and undamaged, in original packaging—a bag.

These are silicon N channel IGBTs, with a small switching transistor category.

10 PCS RJP30H2A TO-263 SMD Silicon N Channel IGBT High Speed Power Switching

They have a minimum DC amplifier gain of 36.2 dB, and common basis configuration.

Preliminary Datasheet for Silicon N Channel IGBT (R07DS0468EJ

They feature 2 elements per chip, with a mounting style of surface mount.

RJP30E4 (5x) Encapsulation:TO-263,Silicon N Channel IGBT | eBay

Operating temperature ranges from -40°C to 105°C.

RJP63F3A Silicon N Channel IGBT High Speed Power Switching (pack of 5

They have 2 pins, and are unbranded/generic.

No UPC.

Perfect for power electronics projects.

RJP30E2 Datasheet PDF , Renesas Electronics : Silicon N Channel IGBT

Grab these for your circuit designs.

Rjp30e4 (5x) Encapsulation:to-263 Silicon N Channel Igbt 1 Jual RJP63K2

$ 6.50
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4.5 out of 5 stars
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